M49000000S datasheet(14/64 Pages) AMD

14 / 64 page

July 19, 2002

Am49DL32xBG

P R E L I M I NARY

may be initiated for simultaneous operation with zero

latency. I

CC6f and ICC7f in the table represent the cur-

re nt specificatio ns for re ad-while-prog ram and

read-while-erase, respectively.

Standby Mode

When the system is not reading or writing to the de-

vice, it can place the device in the standby mode. In

this mode, current consumption is greatly reduced,

and the outputs are placed in the high impedance

state, independent of the OE# input.

The device enters the CMOS standby mode when the

CE#f and RESET# pins are both held at V

CC ± 0.3 V.

(Note that this is a more restricted voltage range than

IH.) If CE#f and RESET# are held at VIH, but not

within V

CC ± 0.3 V, the device will be in the standby

mode, but the standby current will be greater. The de-

vice requires standard access time (t

CE) for read ac-

cess when the device is in either of these standby

modes, before it is ready to read data.

If the device is deselected during erasure or program-

ming, the device draws active current until the

operation is completed.

CC3f in the table represents the standby current spec-

ification.

Automatic Sleep Mode

The automatic sleep mode minimizes Flash device en-

ergy consumption. The device automatically enables

this mode when addresses remain stable for t

ACC +

30 ns. The automatic sleep mode is independent of

the CE#f, WE#, and OE# control signals. Standard ad-

dress access timings provide new data when ad-

dresses are changed. While in sleep mode, output

data is latched and always available to the system.

CC5f in the table represents the automatic sleep mode

current specification.

RESET#: Hardware Reset Pin

The RESET# pin provides a hardware method of re-

setting the device to reading array data. When the RE-

SET# pin is driven low for at least a period of t

RP, the

device immediately terminates any operation in

progress, tristates all output pins, and ignores all

read/write commands for the duration of the RESET#

pulse. The device also resets the internal state ma-

chine to reading array data. The operation that was in-

terrupted should be reinitiated once the device is

ready to accept another command sequence, to en-

sure data integrity.

Current is reduced for the duration of the RESET#

pulse. When RESET# is held at V

SS±0.3 V, the device

draws CMOS standby current (I

CC4f). If RESET# is

held at V

IL but not within VSS±0.3 V, the standby cur-

rent will be greater.

The RESET# pin may be tied to the system reset cir-

cuitry. A system reset would thus also reset the Flash

memory, enabling the system to read the boot-up firm-

ware from the Flash memory.

If RESET# is asserted during a program or erase op-

eration, the RY/BY# pin remains a “0” (busy) until the

internal reset operation is complete, which requires a

time of t

READY (during Embedded Algorithms). The

system can th us mo nito r RY /BY# to de te rmin e

whether the reset operation is complete. If RESET# is

asserted when a program or erase operation is not ex-

ecuting (RY/BY# pin is “1”), the reset operation is com-

pleted within a time of t

READY (not during Embedded

Algorithms). The system can read data t

RH after the

RESET# pin returns to V

IH.

Refer to the pSRAM AC Characteristics tables for RE-

SET# parameters and to Figure 15 for the timing dia-

gram.

Output Disable Mode

When the OE# input is at V

IH, output from the device is

disabled. The output pins are placed in the high

impedance state.

Table 3.

Device Bank Division

Device

Part Number

Bank 1

Bank 2

Megabits

Sector Sizes

Megabits

Sector Sizes

Am29DL322G

4 Mbit

Eight 8 Kbyte/4 Kword,

seven 64 Kbyte/32 Kword

28 Mbit

Fifty-six

64 Kbyte/32 Kword

Am29DL323G

8 Mbit

Eight 8 Kbyte/4 Kword,

fifteen 64 Kbyte/32 Kword

24 Mbit

Forty-eight

64 Kbyte/32 Kword

Am29DL324G

16 Mbit

Eight 8 Kbyte/4 Kword,

thirty-one 64 Kbyte/32 Kword

16 Mbit

Thirty-two

64 Kbyte/32 Kword

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