PDTC124EE datasheet(4/8 Pages) PHILIPS

No. de pieza	PDTC124EE

Descripción Electrónicos	NPN resistor-equipped transistor

PDF	8 Pages

Scroll/Zoom	100%

Fabricante Electrónico	PHILIPS [NXP Semiconductors]

Página de inicio	http://www.nxp.com

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4 / 8 page

1998 Jul 31

Philips Semiconductors

Product speciﬁcation

NPN resistor-equipped transistor

PDTC124EE

Fig.3

DC current gain as a function of collector

current; typical values.

VCE =5V.

(1) Tamb = 150 °C.

(2) Tamb =25 °C.

(3) Tamb = −40 °C.

handbook, halfpage

MGM916

10−1

110

102

IC (mA)

hFE

103

102

(1)

(2)

(3)

Fig.4

Collector-emitter saturation voltage as a

function of collector current; typical values.

IC/IB = 20.

(1) Tamb = 100 °C.

(2) Tamb =25 °C.

(3) Tamb = −40 °C.

handbook, halfpage

(2)

(3)

(1)

10−1

10−2

MGM915

10−1

110

102

IC (mA)

VCEsat

(V)

Fig.5

Input-off voltage as a function of collector

current; typical values.

VCE =5V.

(1) Tamb = −40 °C.

(2) Tamb =25 °C.

(3) Tamb = 100 °C.

handbook, halfpage

(2)

(3)

(1)

10−1

MGM918

10−2

10−1

110

IC (mA)

Vi(off)

(V)

Fig.6

Input-on voltage as a function of collector

current; typical values.

VCE = 0.3 V.

(1) Tamb = −40 °C.

(2) Tamb =25 °C.

(3) Tamb = 100 °C.

handbook, halfpage

102

10−1

MGM917

10−1

110

102

IC (mA)

Vi(on)

(V)

(1) (2) (3)

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