1998 Jul 31

3

Philips Semiconductors

Product specification

NPN resistor-equipped transistor

PDTC124EE

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Transistor mounted on an FR4 printed-circuit board.

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

−

50

V

collector-emitter voltage

open base

−

50

V

emitter-base voltage

open collector

−

10

V

input voltage

positive

−

+40

V

negative

−−10

V

output current (DC)

−

100

mA

peak collector current

−

100

mA

total power dissipation

−

150

mW

storage temperature

−65

+150

°C

junction temperature

−

150

°C

operating ambient temperature

−65

+150

°C

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

thermal resistance from junction to ambient note 1

833

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

collector cut-off current

−−

100

nA

collector cut-off current

−−

1

µA

−−

50

µA

emitter cut-off current

−−

180

µA

DC current gain

60

−−

collector-emitter saturation voltage

−−

150

mV

input-off voltage

−

1.1

0.8

V

input-on voltage

2.5

1.7

−

V

R1

input resistor

15.4

22

28.6

k

Ω

resistor ratio

0.8

1

1.2

collector capacitance

−−

2.5

pF

R2

R1

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