PEMD13 datasheet(5/12 Pages) PHILIPS

No. de pieza	PEMD13

Descripción Electrónicos	NPN/PNP resistor-equipped transistors; R1 = 4.7 kohm, R2 = 47 kohm

PDF	12 Pages

Scroll/Zoom	100%

Fabricante Electrónico	PHILIPS [NXP Semiconductors]

Página de inicio	http://www.nxp.com

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5 / 12 page

2001 Sep 11

Philips Semiconductors

Preliminary speciﬁcation

NPN/PNP resistor-equipped transistors;

R1 = 4.7 k

Ω, R2=47kΩ

PEMD13

handbook, halfpage

103

102

MGW399

10−1

110

IC (mA)

hFE

102

(1)

(2)

(3)

Fig.3

DC current gain as a function of collector

current; typical values.

TR1 (NPN); VCE =5V.

(1) Tamb = 150 °C.

(2) Tamb =25 °C.

(3) Tamb = −40 °C.

handbook, halfpage

10−2

10−1

MGW400

10−1

110

IC (mA)

VCEsat

(V)

102

(1)

(3)

(2)

Fig.4

Collector-emitter saturation voltage as a

function of collector current; typical values.

TR1 (NPN); IC/IB = 20.

(1) Tamb = 100 °C.

(2) Tamb =25 °C.

(3) Tamb = −40 °C.

handbook, halfpage

10−1

MGW401

10−2

10−1

IC (mA)

Vi(off)

(V)

(1)

(2)

(3)

Fig.5

Input-off voltage as a function of collector

current; typical values.

TR1 (NPN); VCE =5V.

(1) Tamb = −40 °C.

(2) Tamb =25 °C.

(3) Tamb = 100 °C.

handbook, halfpage

102

10−1

MGW402

10−1

110

IC (mA)

102

Vi(on)

(V)

(1)

(2)

(3)

Fig.6

Input-on voltage as a function of collector

current; typical values.

TR1 (NPN); VCE = 0.3 V.

(1) Tamb = −40 °C.

(2) Tamb =25 °C.

(3) Tamb = 100 °C.

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