PEMD13 datasheet(2/12 Pages) PHILIPS

No. de pieza	PEMD13

Descripción Electrónicos	NPN/PNP resistor-equipped transistors; R1 = 4.7 kohm, R2 = 47 kohm

PDF	12 Pages

Scroll/Zoom	100%

Fabricante Electrónico	PHILIPS [NXP Semiconductors]

Página de inicio	http://www.nxp.com

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2 / 12 page

2001 Sep 11

Philips Semiconductors

Preliminary speciﬁcation

NPN/PNP resistor-equipped transistors;

R1 = 4.7 k

Ω, R2 = 47 kΩ

PEMD13

FEATURES

• 300 mW total power dissipation

• Very small 1.6 × 1.2 mm ultra thin package

• Excellent coplanarity due to straight leads

• Replaces two SC-75/SC-89 packaged transistors on

same PCB area

• Reduces required PCB area

• Reduced pick and place costs.

APPLICATIONS

• General purpose switching and amplification

• Inverter and interface circuits

• Circuit driver.

DESCRIPTION

NPN/PNP resistor-equipped transistors in a SOT666

plastic package.

MARKING

TYPE NUMBER

MARKING CODE

PEMD13

PINNING

SYMBOL

DESCRIPTION

1, 4

TR1; TR2

emitter

2, 5

TR1; TR2

base

6, 3

TR1; TR2

collector

handbook, halfpage

MAM448

Top view

TR1

TR2

Fig.1 Simplified outline (SOT666) and symbol.

MBK120

2, 5

6, 3

1, 4

Fig.2 Equivalent inverter symbol.

QUICK REFERENCE DATA

SYMBOL

PARAMETER

MAX.

UNIT

VCEO

collector-emitter voltage

ICM

peak collector current

100

bias resistor

4.7

Ω

bias resistor

Ω

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