Silicon PNP Power Transistor

2SA2044

www.iscsemi.com

2

ELECTRICAL CHARACTERISTICS （TC=25℃ unless otherwise specified）

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNI

T

V(BR)EBO

Emitter-Base Breakdown Voltage

IE=-10uA,IC=0

-6

--

--

V

V (BR)CEO

Collector-Emitter Breakdown Voltage

IC=-1mA, IB=0

-30

--

--

V

V(BR)CBO

Collector-Base Breakdown Voltage

IC=-10uA ,IE=0

-30

--

--

V

VCE(sat)

Collector-Emitter Saturation Voltage

IC= -4A; IB= -200mA

--

--

-340

mV

IC= -2.5A; IB= -50mA

--

--

-290

mV

VBE(sat)

Base-Emitter Saturation Voltage

IC= -2.5A; IB= -50mA

--

--

-1.2

V

ICBO

Collector Cutoff Current

VCB= -30V; IE= 0

--

--

-0.1

μ

A

IEBO

Emitter Cutoff Current

VEB= -4V; IC=0

--

--

-0.1

μ

A

hFE

DC Current Gain

IC= -500mA; VCE= -2V

200

--

560

fT

Transition frequency

VCE=-10V ,IC=-500mA

--

290

--

MHz

Cob

Collector output capacitance

VCB=-10V ,IE=0,f=1MHz

--

52

--

pF

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notification. The information contained herein is presented only as a guide for the applications of our

products.

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