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2SA2044-252 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SA2044-252 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  Silicon PNP Power Transistor 2SA2044 www.iscsemi.com 1 DESCRIPTION · Collector-Emitter Breakdown Voltage- : V(BR)CEO= -30V(Min) · DC Current Gain- : hFE= 200(Min)@ IC= -500mA · Fast switching speed · Large current capacity APPLICATIONS · Power amplifier applications · Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -9 A ICP Collector Current-Continuous Pulse -12 A PC Total Power Dissipation @ TC=25℃ 15 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
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Descripción similar - 2SA2044-252 |
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