PESD1LIN datasheet(3/7 Pages) EVVOSEMI

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Characteristics

[1]

Non-repetitive current pulse 8/20

s exponential decay waveform according to IEC 61000-4-5.

Table 6.

Characteristics

Tamb = 25 C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VRWM

reverse standoff voltage

PESD1LIN (15 V)

PESD1LIN (24 V)

IRM

reverse leakage current

PESD1LIN (15 V)

VRWM = 15 V

< 1

PESD1LIN (24 V)

VRWM = 24 V

< 1

VBR

breakdown voltage

IR = 5 mA

PESD1LIN (15 V)

17.1

18.9

20.3

PESD1LIN (24 V)

25.4

27.8

30.3

diode capacitance

VR = 0 V; f = 1 MHz

VCL

clamping voltage

[1]

PESD1LIN (15 V)

IPP = 1 A

IPP = 5 A

PESD1LIN (24 V)

IPP = 1 A

IPP = 3 A

rdif

differential resistance

PESD1LIN (15 V)

IR = 1 mA

225



PESD1LIN (24 V)

IR = 1 mA

300



Tamb =25 C

Fig 3.

Peak pulse power as a function of exponential

pulse duration; typical values

Fig 4.

Relative variation of peak pulse power as a

function of junction temperature; typical

values

006aaa164

103

102

104

PPP

(W)

tp (μs)

1104

103

102

Tj (°C)

200

150

100

001aaa193

0.4

0.8

1.2

PPP

PPP(25°C)

PESD1LIN

Rev:2023A2

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