UT4822G-S08-R datasheet(4/4 Pages) BYCHIP

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UT4822G-S08-R Datasheet(PDF) 4 Page - BYCHIP ELECTRONICS CO., LIMITED

No. de pieza	UT4822G-S08-R

Descripción Electrónicos	Dual N-channel Enhancement Mode Power MOSFET

PDF	4 Pages

Scroll/Zoom	100%

Fabricante Electrónico	BYCHIP [BYCHIP ELECTRONICS CO., LIMITED]

Página de inicio	http://www.bychip.cn/

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4 / 4 page

VDS , Drain-Source Voltage (V)

Fig7. Typical Capacitance Vs.Drain-Source Voltage

Qg -Total Gate Charge (nC)

Fig8. Typical Gate Charge Vs.Gate-Source Voltage

T1, Square Wave Pulse Duration(sec)

Fig9. T1 ,Transient Thermal Response Curve

Fig10. Unclamped Inductive Test Circuit and

waveforms

Fig11. Switching Time Test Circuit and waveforms

Typical Characteristics

www.bychip.cn

UT4822G-S08-R

v4.0

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