UT4822G-S08-R datasheet(1/4 Pages) BYCHIP

No. de pieza	UT4822G-S08-R

Descripción Electrónicos	Dual N-channel Enhancement Mode Power MOSFET

PDF	4 Pages

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Fabricante Electrónico	BYCHIP [BYCHIP ELECTRONICS CO., LIMITED]

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Maximum ratings, at T j=25 °C, unless otherwise specified

Symbol

Parameter

Rating

Unit

(BR)DSS

V

Drain-Source breakdown voltage

30

V

S

I

Diode continuous forward current

A

T =25°C

2.3

A

D

I

Continuous drain current @VGS=10V

A

T =25°C

9

A

T =100°C

5.7

A

DM

I

Pulse drain current tested ①

A

T =25°C

36

A

EAS

Avalanche energy, single pulsed ②

9

mJ

D

P

Maximum power dissipation

A

T =25°C

2

W

VGS

Gate-Source voltage

±20

V

MSL

Level 3

STG

T

J

T

Storage and operating temperature range

-55 to 150

°C

Thermal Characteristics

Symbol

Parameter

Typical

Unit

RθJL

Thermal Resistance-Junction to Lead

40

°C/W

JA

R

Thermal Resistance-Junction to Ambient

62.5

°C/W

Dual N-channel Enhancement Mode Power MOSFET

Features

 VDS=

30V, ID= 9 A

RDS(ON) <

16 mΩ @ VGS = 10V

RDS(ON) <

24 mΩ @ VGS = 4.5V

●

Advanced Trench Technology

●

Provide Excellent RDS(ON) and Low Gate

Charge

●

Lead Free and Green Available

100% UIS TESTED!

100% ΔVds TESTED!

General Features

SOP-8 (Dual)

Schematic diagram

www.bychip.cn

Pin Assignment

UT4822G-S08-R

v1.0

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UT4822G-S08-R Datasheet(PDF) 1 Page - BYCHIP ELECTRONICS CO., LIMITED

UT4822G-S08-R Datasheet(HTML) 1 Page - BYCHIP ELECTRONICS CO., LIMITED

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