HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HE6464

Issued Date : 1993.09.07

Revised Date : 2005.02.15

Page No. : 1/4

HT666

HSMC Product Specification

HT666

NPN EPITAXIAL PLANAR TRANSISTOR

Description

The HT666 is designed for general purpose amplifier and high-speed,medium-

power switching applications.

Features

• High Frequency Current Gain

• High Speed Switching Transistor

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature ........................................................................................................................... -55 ~ +150

°C

Junction Temperature ................................................................................................................... +150

°C Maximum

• Maximum Power Dissipation

Total Power Dissipation (T

• Maximum Voltages and Currents (T

BV

BV

BV

I

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BV

CBO

75

-

-

V

I

*BV

CEO

40

-

-

V

I

BV

EBO

6-

-

V

I

I

CBO

-

-

10

nA

V

I

CEX

-

-

10

nA

V

I

EBO

-

-

50

nA

V

*V

CE(sat)1

-

-

300

mV

I

*V

CE(sat)2

--

1

V

I

*V

BE(sat)1

--

1.2

V

I

*V

BE(sat)2

--

2

V

I

*h

FE1

35

---

V

*h

FE2

50

---

V

*h

FE3

75

---

V

*h

FE4

100

300

-

V

*h

FE5

40

---

V

*h

FE6

50

---

V

f

T

300

-

-

MHz

I

*Pulse Test: Pulse Width

≤380us, Duty Cycle≤2%

TO-92