GD10FSX65L4SN datasheet(4/9 Pages) STARPOWER

4 / 9 page

GD10FSX65L4SN

IGBT Module

11/25/2024

4/9

B02

Diode-inverter Characteristics T

C=25

oC unless otherwise noted

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

Diode Forward

Voltage

IC=10A,VGE=0V,Tvj=25

1.60

2.05

IC=10A,VGE=0V,Tvj=125

1.65

IC=10A,VGE=0V,Tvj=150

1.65

Recovered Charge

VR=300V,IF=10A,

-di/dt=825A/μs,VGE=-15V

Ls=48nH,Tvj=25

0.31

μC

IRM

Peak Reverse

Recovery Current

Erec

Reverse Recovery

Energy

0.05

Recovered Charge

VR=300V,IF=10A,

-di/dt=694A/μs,VGE=-15V

Ls=48nH,Tvj=125

0.55

μC

IRM

Peak Reverse

Recovery Current

Erec

Reverse Recovery

Energy

0.10

Recovered Charge

VR=300V,IF=10A,

-di/dt=682A/μs,VGE=-15V

Ls=48nH,Tvj=150

0.59

μC

IRM

Peak Reverse

Recovery Current

Erec

Reverse Recovery

Energy

0.11

NTC Characteristics T

F=25

oC unless otherwise noted

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

R25

Rated Resistance

5.0

kΩ

∆R/R

Deviation of R100

Tvj =100

oC,R100=493.3Ω

-5

P25

Power

Dissipation

20.0

B25/50

B-value

R2=R25exp[B25/50(1/T2-

1/(298.15K))]

3375

B25/80

B-value

R2=R25exp[B25/80(1/T2-

1/(298.15K))]

3411

B25/100

B-value

R2=R25exp[B25/100(1/T2-

1/(298.15K))]

3433

Module Characteristics T

C=25

oC unless otherwise noted

Symbol

Parameter

Min.

Typ.

Max.

Unit

LCE

Stray Inductance

RCC’+EE’

Module Lead Resistance,Terminal to Chip

9.50

mΩ

RthJC

Junction-to-Case (per IGBT-inverter)

Junction-to-Case (per Diode-inverter)

1.555

2.294

1.710

2.523

K/W

RthCH

Case-to-Heatsink (per IGBT-inverter)

Case-to-Heatsink (per Diode-inverter)

Case-to-Heatsink (per Module)

0.775

1.144

0.077

K/W

Mounting Force Per Clamp

Weight of Module

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