Silicon NPN Darlington Power Transistor

RY202

www.iscsemi.com

2

ELECTRICAL CHARACTERISTICS （TC=25℃ unless otherwise specified）

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC= 30mA, IB= 0A

100

--

--

V

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC= 3A ,IB= 12mA

--

--

2.0

V

VCE(sat)-2

Collector-Emitter Saturation voltage

IC= 5A ,IB= 20mA

--

--

4.0

V

VBE(on)

Base-Emitter On Voltage

IC= 3.0A ; VCE= 3V

--

--

2.5

V

ICBO

Collector Cutoff Current

VCB= 100V, IE= 0A

--

--

0.2

mA

ICEO

Collector Cutoff Current

VCE= 50V, IB= 0A

--

--

0.5

mA

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0A

--

--

2

mA

hFE-1

DC Current Gain

IC= 0.5A; VCE= 3V

1000

--

--

--

hFE-2

DC Current Gain

IC= 3.0A; VCE= 3V

1000

--

--

--

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