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RY202 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza RY202
Descripción Electrónicos  Silicon NPN Darlington Power Transistor
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

RY202 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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Silicon NPN Darlington Power Transistor
RY202
www.iscsemi.com
1
DESCRIPTION
·
High DC Current Gain-
: hFE = 1000(Min)@ IC= 3A
·
Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 100V(Min)
·
Low Collector-Emitter Saturation Voltage-
: VCE(sat) = 2.0V(Max)@ IC= 3A
= 4.0V(Max)@ IC= 5A
APPLICATIONS
·
Designed for general-purpose amplifier and low-speed
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-Peak
8
A
IB
Base Current
120
mA
PC
Collector Power Dissipation
TC=25℃
20
W
Collector Power Dissipation
Ta=25℃
1.75
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-c
Thermal Resistance,Junction to Case
1.92
℃
/W


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