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IPZA65R040CM8 Datasheet(PDF) 6 Page - Infineon Technologies AG

No. de pieza IPZA65R040CM8
Descripción Electrónicos  MOSFET 650V CoolMOS™ CM8 Power Transistor
PDF  15 Pages
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Fabricante Electrónico  INFINEON [Infineon Technologies AG]
Página de inicio  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IPZA65R040CM8 Datasheet(HTML) 6 Page - Infineon Technologies AG

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650V CoolMOS™ CM8 Power Transistor
IPZA65R040CM8
Public
Datasheet
6
Revision 2.1
https://www.infineon.com
2025‑03‑07
Table 6      Gate charge characteristics
Parameter
Symbol
Values
Unit Note / Test condition
Min.
Typ.
Max.
Gate to source charge
Q
‑
22
‑
nC
V =400V,  =13.5A,  =0 to 10V
I
V
Gate to drain charge
Q
25
nC
Gate charge total
Q
80
nC
Gate plateau voltage
V
5.8
V
Table 7      Reverse diode characteristics
Parameter
Symbol
Values
Unit Note / Test condition
Min.
Typ.
Max.
Diode forward voltage
V
‑
0.9
‑
V
V =0V,  =13.5A,  =25°C
I
T
Reverse recovery time
t
‑
120
150
ns
V =400V,  =13.5A, d /d =100A/μs; 
I
i t
see table 8
Reverse recovery charge
Q
0.73
1.1
μC
Peak reverse recovery current
I
11.8
‑
A
gs
DD
D
GS
gd
g
plateau
SD
GS
F
j
rr
R
F
F
rr
rrm



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