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MMBT5401. Datasheet(PDF) 4 Page - ON Semiconductor |
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MMBT5401. Datasheet(HTML) 4 Page - ON Semiconductor |
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4 / 8 page ![]() © 2004 Fairchild Semiconductor Corporation www.fairchildsemi.com MMBT5401 Rev. 1.1.0 3 Typical Performance Characteristics Figure 1. Typical Pulsed Current Gain vs. Collector Current Figure 2. Collector-Emitter Saturation Voltage vs. Collector Current Figure 3. Base-Emitter Saturation Voltage vs. Collector Current Figure 4. Base-Emitter On Voltage vs. Collector Current Figure 5. Collector-Cutoff Current vs. Ambient Temperature Figure 6. Collector-Emitter Breakdown Voltage with Resistance Between Emitter-Base 1E-4 1E-3 0.01 0.1 1 0 50 100 150 200 - 40 oC 25 oC 125 oC V CE = 5V I C - COLLECTOR CURRENT (A) 0.1 1 10 100 0.0 0.1 0.2 0.3 0.4 - 40 oC 25 oC 125 oC β = 10 I C - COLLECTOR CURRENT (mA) 0.1 1 10 100 0.2 0.4 0.6 0.8 1.0 125 oC 25 oC - 40 oC β = 10 I C - COLLECTOR CURRENT (mA) 0.1 1 10 100 0.2 0.4 0.6 0.8 1.0 - 40 oC 25 oC 125 oC V CE = 5V I C - COLLECTOR CURRENT (mA) Ω β β 25 50 75 100 125 150 0.1 1 10 100 T - AM BIENT TE MPE RATURE ( C) A V = 10 0V CB ° Between Emitter-Base 0.1 1 10 100 1000 170 180 190 200 210 220 RESISTANCE (k ) Ω β β |
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