© 2004 Fairchild Semiconductor Corporation

www.fairchildsemi.com

MMBT5401 Rev. 1.1.0

November 2014

MMBT5401

PNP Epitaxial Silicon Transistor

Features

• PNP General-Purpose Amplifier

• This device is designed as a general-purpose amplifier

and switch for applications requiring high voltage.

Ordering Information

Absolute Maximum Ratings(1),(2)

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.

Notes:

1. These ratings are based on a maximum junction temperature of 150

°C.

2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or

low-duty-cycle operations.

Part Number

Marking

Package

Packing Method

MMBT5401

2L

SOT-23 3L

Tape and Reel, 3000 pcs, 7 inch Reel

MMBT5401_D87Z

2L

SOT-23 3L

Tape and Reel, 10000 pcs, 13 inch Reel

Symbol

Parameter

Value

Unit

VCEO

Collector-Emitter Voltage

-150

V

VCBO

Collector-Base Voltage

-160

V

VEBO

Emitter-Base Voltage

-5.0

V

IC

Collector Current - Continuous

-600

mA

TJ, TSTG

Operating and Storage Junction Temperature Range

-55 to +150

°C

SOT-23

B

E

C