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STDRIVE101 Datasheet(PDF) 8 Page - STMicroelectronics

No. de pieza STDRIVE101
Descripción Electrónicos  Triple half-bridge gate driver
PDF  32 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STDRIVE101 Datasheet(HTML) 8 Page - STMicroelectronics

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Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
MT
Delay matching, HS and
LS turn-on/off
(2)
20
ns
MTCH
Delay matching between
channels
(3)
20
ns
RDS_diode
Bootstrap diode ON
resistance
100
240
tDT
Deadtime
RDT = 50 kΩ
480
570
650
ns
RDT = 250 kΩ;
TJ = 25 °C
2100
2600
3200
MDT
Matching deadtime
RDT = 50 kΩ (4)
70
ns
MDTCH
Matching deadtime
between channels
RDT = 50 kΩ (5)
70
ns
Logic inputs
VIL
Low logic input voltage
0.8
V
VIH
High logic input voltage
2
V
IIH
Logic “1” input bias current
IN = 3.3 V
TJ = 25 °C
12
16.5
25
µA
IIL
Logic “0” input bias current
IN = 0 V
TJ = 25 °C
100
nA
RPDin
Input lines pull-down
resistor
TJ = 25 °C
132
200
275
kΩ
VFAULT,L
nFAULT low logic output
voltage
ISINK = 4 mA
0.6
V
Overcurrent Comparator
VREF
Comparator reference
voltage
Full temperature range
470
505
525
mV
ICP
Comparator input leakage
current
VCP = 1 V
2
µA
VCP = -0.5 V
-2.5
µA
tDELAY,OC
Overcurrent delay time
See Figure 5
200
ns
tDFOC
Deglitch filter time
See Figure 5
1.3
1.8
2.8
µs
tDISABLE
Overcurrent disable time
See Figure 5
455
600
865
µs
VDS monitoring protection
VDSth
VDS monitoring protection
threshold
VSCREF = 0.2 V
0.1
0.2
0.3
V
VSCREF = 1 V
0.8
1
1.2
VSCREF = 2.5 V
2.2
2.5
2.8
VSCREF,dis
VDS monitoring protection
disable voltage
2.9
V
VSCREF,en
VDS monitoring protection
enable voltage
2.54
V
RSCREF
VDS monitoring reference
pull-down resistor
450
kΩ
tDFSC
VDS monitoring protection
deglitch time
See Figure 6
2.75
4.4
6.45
µs
STDRIVE101
Electrical characteristics
DS13472 - Rev 1
page 8/32



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