STDRIVE101TR datasheet(7/32 Pages) STMICROELECTRONICS

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Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Unit

ISI

Maximum sink current

capabilities

VS = VREG12 = 5.5 V

VBOOTx-VOUTx = 5.5 V

Full temperature range

250

ISO

Maximum source current

capabilities

VS = VREG12 = 12 V

VBOOTx-VOUTx = 12 V

TJ = 25 °C

350

600

VS = VREG12 = 12 V

VBOOTx-VOUTx = 12 V

Full temperature range

300

VS = VREG12 = 5.5 V

VBOOTx-VOUTx = 5.5 V

TJ = 25 °C

300

VS = VREG12 = 5.5 V

VBOOTx-VOUTx = 5.5 V

Full temperature range

250

RPMOS

PMOS on resistance

VS = VREG12 = 12 V

VBOOTx-VOUTx = 12 V

Isource = 100 mA

TJ = 25 °C

3.8

4.8

Ω

VS = VREG12 = 5.5 V

VBOOTx-VOUTx = 5.5 V

Isource = 100 mA

Full temperature range

6.1

Ω

RNMOS

NMOS on resistance

VS = VREG12 = 12 V

VBOOTx-VOUTx = 12 V

Isink = 100 mA

TJ = 25 °C

1.8

2.3

Ω

VS = VREG12 = 5.5 V

VBOOTx-VOUTx = 5.5 V

Isink = 100 mA

Full temperature range

Ω

IOUT,bias

OUTx bias current

OUTx = VS = 60 V

TJ = 25 °C

155

225

µA

OUTx = 0 V

TJ = 25 °C

155

225

µA

ton, toff

Input to output propagation

delay

(1)

VS = VREG12 = 5.5 V

VBOOTx-VOUTx = 5.5 V

Full temperature range

120

STDRIVE101

Electrical characteristics

DS13472 - Rev 1

page 7/32

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