STTH16R04C datasheet(3/10 Pages) STMICROELECTRONICS

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STTH16R04C

Characteristics

3/10

To evaluate the conduction losses use the following equation:

P = 0.83 x IF(AV) + 0.034 x IF

(RMS)

Table 3.

Static electrical characteristics

Symbol

Parameter

Test conditions

Min

Typ

Max

Unit

(1)

Pulse test: tp = 5 ms, δ < 2 %

Reverse leakage current

Tj = 25° C

VR = VRRM

µA

Tj = 125° C

100

(2)

Pulse test: tp = 380 µs, δ < 2 %

Forward voltage drop

Tj = 25° C

IF = 8 A

1.5

Tj = 100° C

1.05

1.3

Tj = 150° C

0.9

1.1

Tj = 25° C

IF = 16 A

1.75

Tj = 100° C

1.25

1.55

Tj = 150° C

1.12

1.37

Table 4.

Dynamic characteristics

Symbol

Parameter

Test conditions

Min

Typ

Max

Unit

trr

Reverse recovery time

IF = 1 A, dIF/dt = -50 A/µs,

VR = 30 V, Tj = 25° C

IF = 1 A, dIF/dt = -100 A/µs,

VR = 30 V, Tj = 25° C

IRM

Reverse recovery current

IF = 8 A, dIF/dt = -200 A/µs,

VR = 320 V, Tj = 125° C

5.5

Softness factor

IF = 8 A, dIF/dt = -200 A/µs,

VR = 320 V, Tj = 125° C

0.4

tfr

Forward recovery time

IF = 8 A, dIF/dt = 100 A/µs

VFR = 1.1 x VFmax, Tj = 25° C

150

VFP

Forward recovery voltage

IF = 8 A, dIF/dt = 100 A/µs

Tj = 25° C

2.9

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