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STTH16R04C Datasheet(PDF) 5 Page - STMicroelectronics

No. de pieza STTH16R04C
Descripción Electrónicos  Ultrafast recovery diode
PDF  10 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STTH16R04C Datasheet(HTML) 5 Page - STMicroelectronics

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STTH16R04C
Characteristics
5/10
Figure 7.
Reverse recovery charges versus
dIF/dt (typical values)
Figure 8.
Thermal resistance junction to
ambient versus copper surface
under tab (Epoxy printed circuit
board FR4, eCU = 35 µm)
0
20
40
60
80
100
120
140
160
180
200
10
100
1000
Q
RR(nC)
I
F= 8 A
V
R=320 V
T
j=125 °C
T
j=25 °C
dIF/dt(A/µs)
0
10
20
30
40
50
60
70
80
0
2
4
6
8
10
12
14
16
18
20
Rth
(j-a)(°C/W)
D²PAK
SCU(cm²)
Figure 9.
Relative variations of dynamic
parameters versus junction
temperature
Figure 10.
Transient peak forward voltage
versus dIF/dt (typical values)
Figure 11.
Forward recovery time versus dIF/dt
(typical values)
Figure 12.
Junction capacitance versus
reverse voltage applied (typical
values)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
25
50
75
100
125
150
I
RM
Q
RR
I
F= 8 A
V
R=320 V
Tj(°C)
Q
[T ]/Q
[T = 125° C] and I
RR
j
RR
j
RM
j
RM
j
[T ]/I
[T = 125° C]
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0
50
100
150
200
250
300
350
400
450
500
V
Fp(V)
I
F=8 A
T
j=125 °C
dIF/dt(A/µs)
0
100
200
300
400
500
600
700
0
100
200
300
400
500
t
FR(ns)
I
F=8 A
V
FR=1.1 x VF max.
T
j=125°C
dIF/dt(A/µs)
10
100
1
10
100
1000
C(pF)
F=1MHz
V
OSC=30mVRMS
T
j=25°C
VR(V)



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