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MB85RS4MT Datasheet(PDF) 8 Page - RAMXEED LIMITED

No. de pieza MB85RS4MT
Descripción Electrónicos  4 M (512 K X 8) Bit SPI
PDF  31 Pages
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Fabricante Electrónico  RAMXEED [RAMXEED LIMITED]
Página de inicio  https://www.ramxeed.com/
Logo RAMXEED - RAMXEED LIMITED

MB85RS4MT Datasheet(HTML) 8 Page - RAMXEED LIMITED

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MB85RS4MT
8
DS501-00053-3v1-E
READ
The READ command reads FeRAM memory cell array data. Arbitrary 24 bits address and op-code of READ
are input to SI. The 5-bit upper address bit is invalid. Then, 8-cycle clock is input to SCK. SO is output
synchronously to the falling edge of SCK. While reading, the SI value is invalid. When CS is risen, the READ
command is completed, but keeps on reading with automatic address increment which is enabled by con-
tinuously sending clocks to SCK in unit of 8 cycles before CS rising. When it reaches the most significant
address, it rolls over to the starting address, and reading cycle keeps on infinitely.
WRITE
The WRITE command writes data to FeRAM memory cell array. WRITE op-code, arbitrary 24 bits of address
and 8 bits of writing data are input to SI. The 5-bit upper address bit is invalid. When 8 bits of writing data is
input, data is written to FeRAM memory cell array. Risen CS will terminate the WRITE command, but if you
continue sending the writing data for 8 bits each before CS rising, it is possible to continue writing with
automatic address increment. When it reaches the most significant address, it rolls over to the starting
address, and writing cycle can be continued infinitely.
CS
SCK
SI
Invalid
MSB
LSB
MSB
Data Out
LSB
High-Z
Invalid
45
0123
26 27
6 7 8 9 10 11 12 13 14 15
38 39
28 29 30 31 32 33 34 35 36 37
00000011 X
32
X X X X 18 17 16
54
SO
76
3
10
54
210
24-bit Address
OP-CODE
CS
SCK
Data In
SI
MSB
24-bit Address
OP-CODE
LSB MSB
LSB
High-Z
10 11
0123456789
14 15
26
31 32
12 13
27 28 29 30
33 34 35 36 37 38 39
0000001
3
0 XXXXX
2 1 0
SO
18 17 16
5 4
3 2 1 0
7654



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