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EF9345 Datasheet(PDF) 12 Page - STMicroelectronics |
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EF9345 Datasheet(HTML) 12 Page - STMicroelectronics |
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12 / 38 page ![]() Data Structure in Memory A page is a data structure displayable on the screen up to 25 rows of characters. According to the character code format, each row on the screen is associated with 2 (or 3) 40-byte buffers. This set of 2 (or 3) buffers constitutes a row buffer (Fig- ure 8). The buffers belonging to a row buffer must meet the following requirements : - They have the same Y address, - They have the same district number, - They lie at 2 (or 3) successive (modulo 4) block addresses in their common district. Consequently, a row buffer is defined by its first buffer address and its format. A page is a set of successive row buffers : - With the same format, - With the same district number, - With the same block address of first buffer. This block address must be even, - Lying at successive (modulo 24) Y addresses. Consequently, a page should not cross a district boundary. General purpose memory area may be used but should respect the buffer of row buffer structure. See Figure 9 for pointer incrementation implied by these data structures. Memory Time Sharing (See Figure 10) The memory interface provides a 500 ns cycle time. That is to say a 2 Mbyte/s memory bandwith. This bandwith is shared between : - Reading a row buffer from memory to load the internal row buffer (up to 120 bytes once each row), - Reading user defined characters slices from me- mory (1 byte each µs), - Indirect microprocessor read or write operation, - Refresh cycles to allow DRAM use, with no over- head. A fixed allocation scheme implements the sharing. During these lines, no microprocessor access is provided for 104 µs ; this hold too when no user defined character slices are addressed. DUM UDS UDS UDS µP LD LD µP 1 µs LD RFSH µP LD µP 1 µs 40 µs24µs 40 µs24µs 312/362 SCAN LINES 250/210 ACTIVE SCAN LINES INACTIVE LINE LAST ROW LINE FIRST ROW LINE OTHER ROW LINE ACTIVE DISPLAY TIME ONE ROW = 10 SCAN LINES MEMORY CYCLE DUM : dummy cycle µP : indirect access to memory RFSH : refresh cycle UDS : slice read cycle LD : read cycle to load the internal row buffer µP RFSH RFSH Figure 10 : Memory Cycle Allocation 3210 4321 0 43210 DB Z (0 to 15) Y (0, 1 ; 8 to 31) X (0 to 39) 13 12 11 10 9876 543 210 TRANSCODING LOGICAL ADDRESS PHYSICAL ADDRESS 5 Figure 11 : Logical to Physical Address Transcoding Performed On-chip Notes : 1. Dummy cycles are read cycles at dummy addresses. 2. RFSH cycles are read cycles performed by an 8-bit auto-incrementing counter. Low order address byte ADM(0:7) cycles through its 256 states in less than 1ms. 3. The microprocessor may indirectly access the memory once every µs, except during the first and the last line of a row, when the internal buffer must be reloaded. EF9345 12/38 |
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