STA680TR datasheet(39/48 Pages) STMICROELECTRONICS

39 / 48 page

DS5877 Rev 13

39/48

STA680

Electrical specifications

6.3

Operating conditions

Table 20. DC electrical characteristics

Symbol

Parameter

Test condition

Min.

Typ.

Max.

Unit

VDD

Core supply voltage Normal drive

1.14

1.2

1.26

VDD_GEN_IO

Generic IO supply

voltage

3.14

3.3

3.46

VDD_FSH_IO

Flash IO supply

voltage

3.14

3.3

3.46

VDD_RAM_

SDRAM IO supply

voltage

3.14

3.3

3.46

VDD_RAM_

IO_1V8(1)

Supply for the

SDRAM clock at

1.8V

1.71

1.8

1.89

VDD_OSC(1)

Oscillator analog

supply voltage

1.71

1.8

1.89

VDD_PLL_

ANA(1)

PLL analog supply

voltage

1.71

1.8

1.89

VDD_PLL_

DIG

PLL digital supply

voltage

Normal drive

1.14

1.2

1.26

VDD_SAF

SAF supply voltage

Normal drive

1.14

1.2

1.26

I1V2

Current from 1.2 V

supply

HD 1.0(2)

Tamb= 25 °C

VDD = 1.20 V

-mA

Tamb = 85 °C

VDD = 1.26 V

149

HD 1.5(3)

Tamb = 25 °C

VDD = 1.20 V

110

-mA

Tamb = 85 C

VDD = 1.26 V

180

I3V3

Current from 3.3 V

supply

HD 1.0(2)

Tamb = 25° C VDD_IO(4)= 3.3 V

-mA

Tamb = 85 °C VDD_IO = 3.46 V

HD 1.5(3)

Tamb = 25 °C VDD_IO = 3.3 V

-mA

Tamb = 85 °C VDD_IO = 3.46 V

Power dissipation

HD 1.0(2)

Tamb = 25 °C

typical supply

214

Tamb = 85 °C

max supply

330

HD 1.5(3)

Tamb = 25 °C

typical supply

297

Tamb = 85 °C

max supply

469

Iil

Low level input

leakage current(5)

Vi = 0 V

1.9

μA

Iih

High level input

leakage current(5)

Vi = VDD_GEN_IO(6)

1.9

μA

Ilpu

High level input

leakage current on

pull up(7)

Vi = VDD_GEN_IO(6)

2.9

μA

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