Data Sheet

ADRF5448

Die on Carrier, Silicon SP4T Switch, Nonreflective, 100 MHz to 45 GHz

Rev. 0

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FEATURES

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Ultrawideband frequency range: 100 MHz to 45 GHz

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Nonreflective 50 Ω design

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Low insertion loss

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1.4 dB at 18 GHz typical

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2.4 dB at 40 GHz typical

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3.5 dB at 45 GHz typical

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High isolation

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55 dB at 18 GHz typical

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42 dB at 40 GHz typical

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43 dB at 45 GHz typical

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High input linearity

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P0.1dB: 29 dBm typical

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IIP3: 52 dBm typical

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High power handling

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29 dBm through path

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17.5 dBm terminated path

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29 dBm hot switching

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No low frequency spurs

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On and off time (50% VCTRL to 10% to 90% of RFOUT): 20 ns

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0.1 dB settling time (50% VCTRL to 0.1 dB of final RFOUT): 60 ns

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33-pad, 2.971 mm × 3.021 mm, Bare Die [CHIP]

APPLICATIONS

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Industrial scanners

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Test instrumentation

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Cellular infrastructure mmWave 5G

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Military radios, radars, and electronic counter measures (ECMs)

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Microwave radios and very small aperture terminals (VSATs)

FUNCTIONAL BLOCK DIAGRAM

Figure 1. Functional Block Diagram

GENERAL DESCRIPTION

The ADRF5448 is a nonreflective, SP4T switch manufactured in the

silicon process attached on a gallium arsenide (GaAs) carrier sub-

strate. The substrate incorporates the bond pads for chip and wire

assembly, and the bottom of the device is metalized, connected to

ground.

The ADRF5448 operates from 100 MHz to 45 GHz with insertion

loss less than 3.5 dB and isolation higher than 40 dB. The device

has an RF input, power handling capability of 29 dBm for the

through path, 17.5 dBm for the terminated path, and 29 dBm for the

hot switching.

The ADRF5448 requires a positive supply (VDD) of +3.3 V and a

negative supply (VSS) of −3.3 V. The device employs complemen-

tary metal-oxide semiconductor (CMOS)-/low-voltage transistor to

transistor logic (LVTTL)-compatible controls.

The ADRF5448 is designed to match a characteristic impedance of

50 Ω and can operate from −40°C to +105°C.