ACT4060

- 3 -

www.active-semi.com

Copyright © 2006 Active-Semi, Inc.

Rev8, 24-Jul-07

PARAMETER

VALUE

UNIT

IN Supply Voltage

-0.3 to 25

V

SW Voltage

V

BS Voltage

V

EN, FB, COMP Voltage

-0.3 to 6

V

Continuous SW Current

Internally Limited

A

Junction to Ambient Thermal Resistance (

θ

105

°C/W

Maximum Power Dissipation

0.76

W

Operating Junction Temperature

-40 to 150

°C

Storage Temperature

-55 to 150

°C

Lead Temperature (Soldering, 10 sec)

300

°C

ELECTRICAL CHARACTERISTICS

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Input Voltage

7

20

V

Feedback Voltage

4.75V

≤ V

1.267

1.293

1.319

V

High-Side Switch On Resistance

0.20

Ω

Low-Side Switch On Resistance

4.7

Ω

SW Leakage

0

10

µA

Current Limit

2.4

2.85

A

COMP to Current Limit

Transconductance

1.8

A/V

Error Amplifier Transconductance

ΔI

550

µA/V

Error Amplifier DC Gain

4000

V/V

Switching Frequency

350

420

490

kHz

Short Circuit Switching Frequency

50

kHz

Maximum Duty Cycle

90

%

Minimum Duty Cycle

0

%

Enable Threshold Voltage

Hysteresis = 0.1V

0.7

1

1.3

V

Enable Pull-Up Current

Pin pulled up to 4.5V typically

when left unconnected

2

µA

Supply Current in Shutdown

8

20

µA

IC Supply Current in Operation

0.7

mA

Thermal Shutdown Temperature

Hysteresis = 10°C

160

°C

: Do not exceed these limits to prevent damage to the device. Exposure to absolute maximum rating conditions for long periods may

affect device reliability.