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BAS21 Datasheet(PDF) 4 Page - ON Semiconductor

No. de pieza BAS21
Descripción Electrónicos  General-Purpose High Voltage Diode
PDF  7 Pages
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Fabricante Electrónico  ONSEMI [ON Semiconductor]
Página de inicio  http://www.onsemi.com
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BAS21 Datasheet(HTML) 4 Page - ON Semiconductor

  BAS21 Datasheet HTML 1Page - ON Semiconductor BAS21 Datasheet HTML 2Page - ON Semiconductor BAS21 Datasheet HTML 3Page - ON Semiconductor BAS21 Datasheet HTML 4Page - ON Semiconductor BAS21 Datasheet HTML 5Page - ON Semiconductor BAS21 Datasheet HTML 6Page - ON Semiconductor BAS21 Datasheet HTML 7Page - ON Semiconductor  
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© 1999 Fairchild Semiconductor Corporation
www.fairchildsemi.com
BAS21 Rev. 1.3
3
Typical Performance Characteristics
Figure 1. Reverse Voltage vs. Reverse Current
BV - 1.0 to 100
A
Figure 2. Reverse Current vs. Reverse Voltage
IR - 55 to 205 V
Figure 3. Reverse Current vs. Reverse Voltage
IR - 180 to 255 V
Figure 4. Forward Voltage vs. Forward Current
VF - 1.0 to 100 A
Figure 5. Forward Voltage vs. Forward Current
VF - 0.1 to 10 mA
Figure 6. Forward Voltage vs. Forward Current
VF - 10 to 800 mA
3
5
10
20
30
50
100
275
300
325
I - REVERSE CURRENT (uA)
R
Ta= 25°C
GENERAL RULE: The Reverse Current of a diode will approximately
double for every ten (10) Degree C increase in Temperature
55
75
95
115
135
155 175 195
0
10
20
30
40
50
V - REVERSE VOLTAGE (V)
R
Ta= 25°C
GENERAL RULE: The Reverse Current of a diode will approximately
double for every ten Degree C increase in Temperature
180
200
220
240
20
30
40
50
60
70
80
90
100
V - REVERSE VOLTAGE (V)
R
Ta= 25°C
255
1
2
3
5
10
20
30
50
100
250
300
350
400
450
I - FORWARD CURRENT (uA)
F
Ta= 25°C
0.1
0.2 0.3
0.5
1
2
3
5
10
450
500
550
600
650
700
I - FORWARD CURRENT (mA)
F
725
Ta= 25°C
10
20
30
50
100
200 300
500
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
I - FORWARD CURRENT (mA)
F
800
Ta= 25°C



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