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BAS21 Datasheet(PDF) 3 Page - ON Semiconductor |
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BAS21 Datasheet(HTML) 3 Page - ON Semiconductor |
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3 / 7 page ![]() © 1999 Fairchild Semiconductor Corporation www.fairchildsemi.com BAS21 Rev. 1.3 2 Thermal Characteristics Values are at TA = 25°C unless otherwise noted. Electrical Characteristics Values are at TA = 25°C unless otherwise noted. Symbol Parameter Max. Unit PD Total Device Dissipation 350 mW Derate Above 25 C2.8 mW/ C RJA Thermal Resistance, Junction-to-Ambient 357 C/W Symbol Parameter Conditions Min. Max. Unit BV Breakdown Voltage IR = 100 A250 V IR Reverse Voltage Leakage Current VR = 200 V 100 nA VR = 200 V, TA = 150°C 100 A VF Forward Voltage IF = 100 mA 1.0 V IF = 200 mA 1.25 V CO Diode Capacitance VR = 0, f = 1.0 MHz 5.0 pF TRR Reverse Recovery Time IF = IR = 30 mA, IRR = 3.0 mA, RL = 100 50 nS |
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