AS1163B datasheet(15/21 Pages) AMSOSRAM

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AS1163B

Electrical characteristics

Short Datasheet

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Symbol

Parameter

Conditions

Min

Typ

Max

Unit

T_J

Junction temperature

-40

150

ºC

Rth

Thermal resistance from

junction to ambient

temperature

°C/W

V_th_se_high

Threshold on SIOx_x to

detect communication

mode (high)

2.85

VDD+0.3

V_th_se_low

Threshold on SIOx_x to

detect communication

mode (low)

-0.3

0.7

V_SIOx_P/N(O,L)

Output low level for pin

SIOx_P and SIOx_N for

single-ended

communication

10k Ohm load

0.7

V_SIOx_P/N(O,H)

Output high level for pin

SIOx_P and SIOx_N for

single-ended

communication

10k Ohm load

VDD-0.7

VDD+0.3

F_com_mcu

Allowed input data rate

for communication in

MCU mode. Tested with

VDD=5V

2.23

2.4

2.62

Mbps

DUTY_com_mcu

Allowed input duty cycle

in MCU mode. Tested

with VDD=5V

47.5

52.5

F_com_can

Allowed input data rate

for communication in

CAN RTX mode. Tested

with VDD=5V

2.31

2.4

2.55

Mbps

DUTY_com_can

Allowed input duty cycle

in CAN RTX mode.

Tested with VDD=5V

Time between

consecutive telegrams

from MCU

Dependent on

length of daisy

chain

8.3

µs

VIH_SE

High level input voltage

single ended

communication

2.4

VDD+0.3

VIL_SE

Low level input voltage

single ended

communication

-0.3

0.7

LVDS_VCM

LVDS common mode

voltage with active

communication

1.2

LVDS_VDIFF

LVDS differential voltage

300

LVDS_VCM_IDLE

LVDS common mode

voltage with no active

communication

AS1163B Datasheet(PDF) 15 Page - ams-OSRAM AG

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