ARF1501 datasheet(1/4 Pages) MICROSEMI

No. de pieza	ARF1501

Descripción Electrónicos	RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE

PDF	4 Pages

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Fabricante Electrónico	MICROSEMI [Microsemi Corporation]

Página de inicio	http://www.microsemi.com

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Microsemi Website - http://www.microsemi.com

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed

.

MAXIMUM RATINGS

All Ratings: T

C = 25°C unless otherwise speciﬁed.

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

DSS

V

DS(ON)

I

DSS

I

GSS

g

fs

V

isolation

V

GS(TH)

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

GS = 0V, ID = 250 μA)

On State Drain Voltage 1 (I

D(ON) = 15A, VGS = 10V)

Zero Gate Voltage Drain Current (V

DS = 1000V, VGS = 0V)

Zero Gate Voltage Drain Current (V

DS = 800V, VGS = 0V, TC = 125°C)

Gate-Source Leakage Current (V

GS = ±30V, VDS = 0V)

Forward Transconductance (V

DS = 25V, ID = 15A)

RMS Voltage (60Hz Sinewave from terminals to mounting surface for 1 minute)

Gate Threshold Voltage (V

DS = VGS, ID = 50mA)

MIN

TYP

MAX

1000

7.5

9

40

1000

±400

5.5

7

TBD

3

5

UNIT

Volts

μA

nA

mhos

Volts

Symbol

V

DSS

I

D

V

GS

P

D

T

J,TSTG

T

L

Parameter

Drain-Source Voltage

Continuous Drain Current @ T

C = 25°C

Gate-Source Voltage

Total Device Dissipation @ T

C = 25°C

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

ARF1501

1000

30

±30

1500

-55 to 175

300

UNIT

Volts

Amps

Volts

Watts

°C

RF POWER MOSFET

N - CHANNEL ENHANCEMENT MODE

250V

750W

40MHz

The ARF1501 is an RF power transistor designed for very high power scientiﬁc, commercial, medical and industrial

RF power generator and ampliﬁer applications up to 40 MHz.

• Speciﬁed 250 Volt, 27.12 MHz Characteristics:

•

Output Power = 750 Watts.

•

Gain = 17dB (Class C)

•

Efﬁciency > 75%

• High Performance Power RF Package.

• Very High Breakdown for Improved Ruggedness.

• Low Thermal Resistance.

• Nitride Passivated Die for Improved Reliability.

ARF1501

THERMAL CHARACTERISTICS

Symbol

R

θJC

R

θJHS

Characteristic (per package unless otherwise noted)

Junction to Case

Junction to Sink (Use High Efﬁciency Thermal Joint Compound and Planar Heat Sink Surface.)

MIN

TYP

MAX

0.10

0.16

UNIT

°C/W

Volts

ARF1501

BeO

1525-xx

DS

S

GS

S

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