Microsemi reserves the right to change, without notice, the specifications and information contained herein.

DYNAMIC CHARACTERISTICS

ARF1501

Symbol

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

Characteristic

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

Test Conditions

V

V

f = 1 MHz

V

V

I

R

MIN

TYP

MAX

5400

6500

300

400

125

160

8

5

25

13

UNIT

pF

ns

FUNCTIONAL CHARACTERISTICS

Symbol

G

PS

η

Ψ

Test Conditions

f = 27.12 MHz

V

V

P

No Degradation in Output Power

Characteristic

Common Source Amplifier Power Gain

Drain Efficiency

Electrical Ruggedness VSWR 10:1

MIN

TYP

MAX

15

17

70

75

UNIT

dB

%

1

5

10

50 100

1000

V

Figure 3, Typical Maximum Safe Operating Area

T

T

SINGLE PULSE

120

50

10

5

1

1ms

10ms

100us

Per transistor section unless otherwise specified.

DATA FOR BOTH SIDES

IN PARALLEL

OPERATION HERE

LIMITED BY R

DS

(ON)

100ms

V

Figure 1, Typical Capacitance vs. Drain-to-Source Voltage

20,000

10,000

5000

1000

500

100

.1

1

10

100 200

C

iss

C

oss

C

rss

60

50

40

30

20

10

0

0

2

4

6

8

10

12

14

V

Figure 2, Typical Transfer Characteristics

V

250μSEC. PULSE TEST

@ <0.5 % DUTY CYCLE

T

T

T