BC856 datasheet(1/2 Pages) RECTRON

No. de pieza	BC856

Descripción Electrónicos	PNP Silicon Planar Epitaxial Transistors

PDF	2 Pages

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Fabricante Electrónico	RECTRON [Rectron Semiconductor]

Página de inicio	http://www.rectron.com

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mA

**Mounted on a ceramic substrate of 8mm x 10mm x 0.7mm

Thermal Resistance

Collector Base Voltage

Storge Temperature

Tstg

mW

Tamb = 60

oC

Junction Temperature

Tj

150

oC

Total power dissipation up to

Ptot**

DESCRIPTION

SYMBOL

UNITS

Collector Emmitter Voltage (+VBE = 1V)

V

5V

IEM

IC

mA

ICM

mA

V

80

50

30

Emitter Base Voltage

VEBO

Emitter Current - Peak

Collector Current (DC)

Base Current - Peak

IBM

Collector Current - Peak

VCBO

VCEX

Collector Emitter Voltage

VCEO

BC856

200

100

200

65

45

BC857

BC858

30

250

80

50

30

200

From soldering points to ambient

Rth(s-a)**

90

-55 to +150

oC

From tab to soldering points

Rth(t-s)

280

From junction to tab

Rth(j-t)

60

K/W

PNP Silicon Planar Epitaxial Transistors

BC856

BC857

BC858

Unit: inch (mm)

Pin configuration:

1. BASE

2. EMITTER

3. COLLECTOR

1

3

2

Absolute Maximum Ratings (Ta = 25

oC unless specified otherwise)

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