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BC856 Datasheet(PDF) 2 Page - Rectron Semiconductor

No. de pieza BC856
Descripción Electrónicos  PNP Silicon Planar Epitaxial Transistors
PDF  2 Pages
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Fabricante Electrónico  RECTRON [Rectron Semiconductor]
Página de inicio  http://www.rectron.com
Logo RECTRON - Rectron Semiconductor

BC856 Datasheet(HTML) 2 Page - Rectron Semiconductor

  BC856 Datasheet HTML 1Page - Rectron Semiconductor BC856 Datasheet HTML 2Page - Rectron Semiconductor  
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BC856
BC857
BC858
MIN TYP MAX
15
4
0.6
0.75
0.82
0.30
0.65
0.7
0.85
0.60
125
475
125
800
125
250
220
475
420
800
4.5
100
125
500
125
800
10
BC856
BC857/BC858
| hfe |
NF
IC = 0.2mA, VCE = 5V
RS= 2k ohm, f = 1KHZ, B= 200HZ
dB
IC = 2mA, VCE = 5V, f= 1kHZ
*VBE (on) decreases by about 2mV/K with increase temperature.
***VBE (Sat) decreases by about 1.7mV/K with increase temperature.
V
V
V
V
IC = 10mA, VCB = 5V, f = 100MHZ
MHZ
Collector Capacitance
CC
IE = ie = 0, VCB = 10V, f = 1MHZ
pF
BC857/BC858
BC856
hFE
BC857C/BC858C
BC856B/BC857B/BC858B
BC856A/BC857A/BC858A
IC = 100mA, IB = 5mA
IC = 100mA, IB = 5mA
Collector Cut Off Current
ICBO
VCB = 30V, IE = 0
nA
VCB = 30V, IE = 0, Tj = 150
oC
uA
Base Emitter On Voltage
TEST CONDITION
VBE(on)*
IC = 2mA, VCE = 5V
IC = 10mA, VCE = 5V
Transition Frequency
Knee Voltage
VCEK
IC = 10mA, -IB = Value for which
IC = 11mA at -VCE = 1V
DC Current Gain
Small Signal Current Gain
DESCRIPTION
SYMBOL
UNITS
Noise Figure
Collector Emitter Saturation Voltage
VCE(Sat)
IC = 10mA, IB = 0.5mA
Base Emitter Saturation Voltage
VBE(Sat)***
IC = 10mA, IB = 0.5mA
IC = 2mA, VCE = 5V
fT
Electrical Characteristics (at Ta=25
oC unless otherwise specified)
www.rectron.com
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