NPN POWER SILICON

SWITCHING TRANSISTOR

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Semelab Li

Semelab Li

Semelab Li

Semelab Limited

mited

mited

mited

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Document Number 9189

Issue 1

Page 1 of 3

2N5667N1

C = 25°C unless otherwise stated)

VCBO

Collector – Base Voltage

400V

VCEO

Collector – Emitter Voltage

300V

VEBO

Emitter – Base Voltage

6V

IC

Continuous Collector Current

5A

IB

Base Current

1.0A

PD

Total Power Dissipation at

TC = 25°C

76W

Derate Above 25°C

0.43W/°C

TJ

Junction Temperature Range

-65 to +200°C

Tstg

Storage Temperature Range

-65 to +200°C

THERMAL PROPERTIES

Symbols

Parameters

Min.

Typ.

Max.

Units

RθJC

Thermal Resistance, Junction To Case - TC = 25°C

2.3

°C/W