NPN POWER SILICON

SWITCHING TRANSISTOR

2N5667N1

Semelab Limited

Semelab Limited

Semelab Limited

Semelab Limited

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Telephone +44 (0) 1455 556565

Fax +44 (0) 1455 552612

Document Number 9189

Issue 1

Page 2 of 3

Symbols

Parameters

Test Conditions

Min.

Typ

Max.

Units

V(BR)CER

(1)

Collector-Emitter

Breakdown Voltage

IC = 1.0mA

RBE = 100Ω

400

V(BR)EBO

(1)

Emitter-Base

Breakdown Voltage

IE = 10µA

IC = 0A

6

V

VCE = 300V

0.2

ICES

Collector-Emitter Cut-Off

Current

TA = 150°C

100

VCB = 300V

0.1

µA

ICBO

Collector-Base Cut-Off

Current

VCB = 400V

1.0

mA

IC = 0.5A

VCE = 2V

25

VCE = 5V

25

75

IC = 1.0A

TA = -55°C

10

IC = 3A

VCE = 5V

10

hFE

(1)

Forward-current transfer

ratio

IC = 5A

VCE = 5V

5

-

IC = 3A

IB = 0.6A

0.4

VCE(sat)

(1)

Collector-Emitter Saturation

Voltage

IC = 5A

IB = 1.0A

1.0

IC = 3A

IB = 0.6A

1.2

VBE(sat)

(1)

Base-Emitter Saturation

Voltage

IC = 5A

IB = 1.0A

1.5

V

DYNAMIC CHARACTERISTICS

IC = 0.5A

VCE = 5V

| hfe |

Magnitude of Common-

Emitter Small-Signal Short-

Circuit forward Current,

Transfer Ratio

f = 10MHz

2

7

-

VCB = 10V

IE = 0

Cobo

Output Capacitance

f = 1.0MHz

120

pF

ton

Turn-On Time

IC = 1.0A

VCC = 100V

0.4

toff

Turn-Off Time

IB1 = - IB2 = 50mA

2.5

µ

s

Notes

Notes

Notes

Notes

(1)

Pulse Width ≤ 300us, δ ≤ 2%