AP2152A datasheet(4/17 Pages) DIODES

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AP2142A/AP2152A

0.5A DUAL CHANNEL CURRENT-LIMITED POWER

SWITCH WITH OUTPUT DISCHARGE

AP2142A/2152A

Document number: DS32191 Rev. 2 - 2

4 of 17

www.diodes.com

October 2010

Electrical Characteristics (TA = 25

oC, VIN = +5.0V, unless otherwise stated)

Symbol

Parameter

Test Conditions (Note 3)

Min

Typ.

Max

Unit

VUVLO

Input UVLO

1.6

2.0

2.4

ISHDN

Input Shutdown Current

Disabled, IOUT= 0

0.1

μA

Input Quiescent Current, Dual

Enabled, IOUT= 0

115

180

μA

ILEAK

Input Leakage Current

Disabled, OUT grounded

μA

IREV

Reverse Leakage Current

Disabled, VIN = 0V, VOUT = 5V, IREV at VIN

0.01

0.1

μA

RDS(ON)

Switch on-resistance

VIN = 5V, IOUT = 0.5A,

TA = 25

SO-8

110

Ω

MSOP-8-EP,

DFN3030E-8

105

VIN = 5V, IOUT = 0.5A, -40

oC≤ T

A ≤ 85

135

VIN = 3.3V, IOUT = 0.5A,

TA = 25

SO-8

110

130

MSOP-8-EP,

DFN3030E-8

105

125

VIN = 3.3V, IOUT = 0.5A, -40

oC≤ T

A ≤ 85

170

ILIMIT

Over-Load Current Limit

VIN = 5V, VOUT = 4V,

CL=4.7μF

-40

oC≤ T

A ≤ 85

0.55

0.7

0.85

ILIMIT_G

Ganged Over-Load Current Limit

VIN = 5V, VOUT = 4V,

OUT1 & OUT2 tied

together, CL=4.7μF

-40

oC≤ T

A ≤ 85

1.1

1.4

1.7

ITrig

Current limiting trigger threshold

Output Current Slew rate (<100A/s), CL=4.7μF

1.0

ITrig_G

Ganged current limiting trigger

threshold

OUT1 & OUT2 tied together, Output Current Slew

rate (<100A/s), CL=4.7μF

1.0

IOS

Short-circuit current per channel

OUTx connected to ground, device enabled into

short circuit, CL=4.7μF

0.7

IOS_G

Ganged short-circuit current

OUT1 & OUT2 connected to ground, device

enabled into short-circuit, CL=4.7μF

1.1

1.4

1.7

TSHORT

Short-circuit response time

VOUT = 0V to IOUT = ILIMIT (output shorted to

ground)

μs

VIL

EN Input Logic Low Voltage

VIN = 2.7V to 5.5V

0.8

VIH

EN Input Logic High Voltage

VIN = 2.7V to 5.5V

ISINK

EN Input leakage

VEN = 0V to 5.5V

μA

ILEAK-O

Output leakage current

Disabled, VOUT = 0V

0.5

μA

Output turn-on rise time

CL = 1μF, Rload = 10Ω

0.6

1.5

Output turn-off fall time

CL = 1μF, Rload = 10Ω

0.05

0.3

TD(ON)

Output turn-on delay time

CL = 100μF, Rload = 10Ω

0.2

0.5

TD(OFF)

Output turn-off delay time

CL = 100μF, Rload = 10Ω

0.1

0.3

RFLG

FLG output FET on-resistance

IFLG = 10mA

Ω

IFOH

FLG off current

VFLG = 5V

0.01

μA

TBlank

FLG blanking time

CL=4.7μF

RDIS

Discharge resistance (Note 4)

VIN = 5V, disabled, IOUT =1mA

100

Ω

TSHDN

Thermal shutdown threshold

Enabled, Rload=1kΩ

140

°C

THYS

Thermal shutdown hysteresis

°C

θJA

Thermal Resistance Junction-to-

Ambient

SO-8 (Note 5)

115

oC/W

MSOP-8-EP (Note 6)

DFN3030E-8 (Note 6)

Notes:

3. Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account

separately.

4. The discharge function is active when the device is disabled (when enable is de-asserted or during power-up / power-down when

VIN < VUVLO). The discharge function offers a resistive discharge path for the external storage capacitor for limited time.

5. Test condition for SO-8: Device mounted on FR-4 substrate PCB with minimum recommended pad layout.

6. Test condition for MSOP-8-EP and DFN3030E-8: Device mounted on 2” x 2” FR-4 substrate PCB, 2oz copper, with minimum

recommended pad on top layer and thermal vias to bottom layer ground plane.

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