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SC1406GCTSTR Datasheet(PDF) 18 Page - Semtech Corporation |
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SC1406GCTSTR Datasheet(HTML) 18 Page - Semtech Corporation |
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18 / 28 page ![]() 18 ã 2000 Semtech Corp. www.semtech.com POWER MANAGEMENT SC1406G Soft-Start Design: The three outputs have two soft-start controls, with the two linear regulators sharing one of them. The soft-start timing is controlled with a capacitor charged by a nominal 1mA current source. The soft-start period is the time to charge the soft-start capacitors to Vref (though the voltage eventually terminates near Vcc). The soft-start capacitor value is calculated for a 2ms nominal time by: T. The soft-start period for V CORE should be somewhat longer due to the higher power and larger amount of output capacitance to charge. Choosing 3ms results in C10=1800pF. Low Battery Design: The SC1406G provides a low-battery indication with a hysteresis current feature. That is, when the voltage at the LBIN pin is above the reference, the input bias current is very low. Once the threshold (a 1.225V bandgap) is reached and LBIN trips, a 0.6mA to 10mA current source must be overcome by the battery and divider before the converter is allowed to come on again. For the sample converter, assume V TRIP = 9.5V. Ignoring bias currents, and assuming R8=20kW. U. In the example schematic, R9 = 43kW to accommodate operation down to 4.5VDC. The rounded value gives a V TRIPLO of 9.62V. In order for LBIN to reset, the current source must be overpowered, so: V. W. The hysteresis current, in this case provides a voltage hysteresis of 0.82V to 1.38V. C10 provides noise filtering at the LBIN input. The 1nF value is intended to provide attenuation at the lowest frequency load of the battery. To disable this feature, tie LBIN (pin 17) to Vcc of the SC1406 through a resistor (10kW is a good nominal value). Clamp Design: The clamp circuit is an open-collector uni-directional level shifter capable of driving a 16mA load with a 5ns typical delay time. VCIN (pin 4) must be referenced to the V IO rail; VCOUT (pin 3) can be tied to either V CLK or VCC , depending on the connection of the pull-up resistor. The clamp circuit has a dedicated refer- ence, VCBYP (pin 5) that requires a 1.5nF capacitor for proper operation. The clamp circuit is not normally used in Pentium III mobile computers. To disable this function, tie VCIN to analog ground, with VCOUT and VCBYP open. Other Features and Functions: ENABLE is a 5V-safe CMOS input with an upper threshold voltage at 70% of Vcc and a lower threshold of 0.8V. It can be used in two different ways. One is to tie ENABLE to the PWRDY pin of the SC1405; this will bring both the SC1405 and SC1406 up properly even if ENABLE can be active before the system 5V supply is stable. Alternately, the ENABLE lines of both devices can be tied together. CO is the clock output from the SC1406 to the SC1405. POWERGOOD is LO (inactive) whenever any of the following conditions is present: 1 Vcore is more than 10% higher or lower than its set- point, 2 Either soft-start pin is lower than its threshold 3 Vcc is below the UVLO threshold 4 LBIN is active POWERGOOD is HI (active) when none of the above is true, as during normal operating conditions. SC1405 Design Example: The main function of SC1405 is to rapidly drive the power MOSFETs on and off on using a break before make algorithm to prevent cross conduction in the FETs. FET selection: The duty cycle (d) of the converter is a function of the input voltage. In most applications, where the converter runs directly from the battery, AC adapter, or even a regulated +5V source, d is always going to be much less than 50%. The low-side (or synchronous) FET, therefore, is conducting most of the time; further, because the diode clamps the voltage across the low- side FET, it switches with virtually zero voltage across it. The high-side (or control) FET conducts for a relatively small amount of time, but has to switch the entire voltage. Therefore, the control FET can have a relatively high R DS (ON), but needs to have low capacitive losses, and the synchronous FET needs to have a low R DS (ON), and can have higher capacitance. To accomplish this, one can use a single FET type, with two or more in parallel in the low-side, or one can use FET sets with individually optimized devices. CSS ICSS tSS ⋅ VREF := CSS 1.176 10 9 − × F = VLBTRIP VLBREF R8 R9 + R8 ⋅ := VTRIPHIMAX VLBREF R9 10 µA ⋅ VLBREF R8 + ⋅ + := VTRIPHIMAX 10.986 V = V TRIPHIMIN V LBREF R9 6 µA ⋅ V LBREF R8 + ⋅ + := VTRIPHIMIN 10.438V = |
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