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2N6594 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

No. de pieza 2N6594
Descripción Electrónicos  Silicon PNP Power Transistors
PDF  3 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2N6594 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  2N6594 Datasheet HTML 1Page - Inchange Semiconductor Company Limited 2N6594 Datasheet HTML 2Page - Inchange Semiconductor Company Limited 2N6594 Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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Inchange Semiconductor
Product Specification
2
Silicon PNP Power Transistors
2N6594
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
IC=-0.1A ;IB=0
-40
V
VCEsat-1
Collector-emitter saturation voltage
IC=-4A; IB=-0.4A
-1.5
V
VCEsat-2
Collector-emitter saturation voltage
IC=-12A; IB=-2.4A
-4.0
V
VBEsat
Base-emitter saturation voltage
IC=-4A; IB=-0.4A
-2.0
V
ICEO
Collector cut-off current
VCE=-40V; IB=0
-1.0
mA
ICBO
Collector cut-off current
VCB=-45V; IE=0
-1.0
mA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-5.0
mA
hFE-1
DC current gain
IC=-4A ; VCE=-3V
15
200
hFE-2
DC current gain
IC=-12A ; VCE=-4V
5
100
fT
Transition frequency
IC=-1.0A ; VCE=-4V;f=0.5MHz
1.5
20
MHz
Switching times
td
Delay time
0.4
μs
tr
Rise time
1.5
μs
tstg
Storage time
5.0
μs
tf
Fall time
IC=-2A; IB1=-IB2=-0.2A
VCC=-30V; tp=25μs;
Duty Cycle≤2.0%
1.5
μs
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-c
Thermal resistance junction to case
1.75
℃/W



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