2N6594 datasheet(1/3 Pages) ISC

No. de pieza	2N6594

Descripción Electrónicos	Silicon PNP Power Transistors

PDF	3 Pages

Scroll/Zoom	100%

Fabricante Electrónico	ISC [Inchange Semiconductor Company Limited]

Página de inicio	http://www.iscsemi.cn

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1 / 3 page

Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

2N6594

DESCRIPTION

・With TO-3 package

・Complement to type 2N6569

・Wide area of safe operation

APPLICATIONS

・Designed for low voltage amplifier

power switching applications

PINNING

DESCRIPTION

1

Base

2

Emitter

3

Collector

Absolute maximum ratings(Ta=℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

VCBO

Collector-base voltage

Open emitter

-45

V

VCEO

Collector-emitter voltage

Open base

-40

V

VEBO

Emitter-base voltage

Open collector

-5

V

IC

Collector current

-12

A

ICM

Collector current-peak

-24

A

IB

Base current

-5

A

IE

Emitter current

-17

A

IEM

Emitter current-peak

-34

A

PC

Collector power dissipation

TC=25℃

100

W

Tj

Junction temperature

200

℃

Tstg

Storage temperature

-65~200

℃

Fig.1 simplified outline (TO-3) and symbol

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2N6594 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

2N6594 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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