SW50N06A datasheet(4/7 Pages) SEMIPOWER

No. de pieza	SW50N06A

Descripción Electrónicos	N-channel MOSFET (TO-220F , TO-220)

PDF	7 Pages

Scroll/Zoom	100%

Fabricante Electrónico	SEMIPOWER [Xian Semipower Electronic Technology Co., Ltd.]

Página de inicio	http://www.samwinsemi.com

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Fig. 9. Maximum drain current vs.

case temperature.

Fig. 8. On resistance variation

vs. junction temperature

Fig. 10. Maximum safe operating area

Fig. 11. Transient thermal response curve

Fig 7. Breakdown Voltage Variation

vs. Junction Temperature

-100

-50

100

150

200

0.8

0.9

1.0

1.1

1.2

،ط Note

1. V

= 0V

2. I

= 250§ث

Temperature [،ة]

-100

-50

100

150

200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

،ط Note

1. Vgs = 10V

2. Id = 25A

Tj, Junction temperature[

oC]

-1

Case Temp. @ 175،ة

Junction Temp.@ 25،ة

Single Pulse

،ط See Figure 11.

Operating Area limited

by R

DS(ON)

100us

1ms

10ms

[ V ], Drain to source Voltage

-5

-4

-3

-2

-1

-2

-1

<Note>

1. Z

¥بJC(t) = 1.25،ة/W Max.

2. Duty Factor, D=t

3. Z

¥بJC(t) = (TJM - TC)/PD

[ sec ], Square Wave Pulse Duration

SW50N06A

SAMWIN

4/7

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