Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.

Features

■ High ruggedness

■ R

■ Gate Charge (Typ 36nC)

■ Improved dv/dt Capability

■ 100% Avalanche Tested

General Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics,

such as fast switching time, low on resistance, low gate charge and especially excellent

avalanche characteristics. It is mainly suitable for half bridge or full bridge resonant

topology like a electronic ballast, and also low power switching mode power appliances.

N-channel MOSFET

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220

TO-220F

V

DSS

Drain to Source Voltage

60

V

I

D

Continuous Drain Current (@T

50

50*

A

Continuous Drain Current (@T

36

36*

A

I

DM

Drain current pulsed

(note 1)

200

A

V

GS

Gate to Source Voltage

± 20

V

E

AS

Single pulsed Avalanche Energy

(note 2)

412

mJ

E

AR

Repetitive Avalanche Energy

(note 1)

13

mJ

dv/dt

Peak diode Recovery dv/dt

(note 3)

7

V/ns

P

D

Total power dissipation (@T

110

42

W

0.9

0.34

T

Operating Junction Temperature & Storage Temperature

-55 ~ + 150

T

L

Maximum Lead Temperature for soldering

purpose, 1/8 from Case for 5 seconds.

300

Thermal characteristics

Symbol

Parameter

Value

Unit

TO-220

TO-220F

R

thjc

Thermal resistance, Junction to case

1.14

2.97

R

thcs

Thermal resistance, Case to Sink

0.5

R

thja

Thermal resistance, Junction to ambient

62.5

Mar. 2011. Rev. 2.0

1/7

*. Drain current is limited by junction temperature.

BV

I

D

: 50A

R

1

2

3

1. Gate 2. Drain 3. Source

1

2

3

TO-220F

1

2

3

TO-220

SW50N06A

SAMWIN

Item

Sales Type

Marking

Package

Packaging

1

SW P 50N06A

SW50N06A

TO-220

TUBE

2

SW F 50N06A

SW50N06A

TO-220F

TUBE

Order Codes