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UTT12P10L-TN3-R Datasheet(PDF) 2 Page - Unisonic Technologies

No. de pieza UTT12P10L-TN3-R
Descripción Electrónicos  100V, 12A P-CHANNEL POWER MOSFET
PDF  6 Pages
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Fabricante Electrónico  UTC [Unisonic Technologies]
Página de inicio  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UTT12P10L-TN3-R Datasheet(HTML) 2 Page - Unisonic Technologies

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UTT12P10
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 6
www.unisonic.com.tw
VER.a
ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
-100
V
Gate-Source Voltage
VGSS
±20
V
Drain Current
Continuous,
VGSS@-10V
TC=25°C
ID
-19
A
TC=100°C
-13
A
Pulsed (Note 2)
IDM
-72
A
Avalanche Current (Note 2)
IAR
-19
A
Avalanche Energy
Repetitive (Note 3)
EAS
640
mJ
Single Pulsed (Note 2)
EAR
15
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
-5.5
V/ns
Power Dissipation (TC=25°C)
PD
125
W
Junction Temperature
TJ
-55~+150
°C
Storage Temperature
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive rating; pulse width limited by max. junction temperature.
3. VDD=-25V, starting TJ=25°C, L=2.7mH, RG=25Ω, IAS=-19A. (See Figure 2)
4. ISD≤-19A, di/dt≤200A/µs, VDD≤BVDSS, TJ≤175°C
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Case
θJC
1.0
°C/W
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=-250µA, VGS=0V
-100
V
Drain-Source Leakage Current
IDSS
VDS=-100V, VGS=0V,
-100
µA
VDS=-80V, VGS=0V, TJ=150°C
-500
µA
Gate- Source Leakage Current
Forward
IGSS
VGS=+20V
+100 nA
Reverse
VGS=-20V
-100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=-250µA
-2.0
-4.0
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS=-10V, ID=-12A (Note 2)
0.20
Ω
Forward Transconductance
gFS
VDS=-50V, ID=-11A (Note 2)
6.2
S
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS=-25V, VGS=0V, f=1.0MHz
1400
pF
Output Capacitance
COSS
590
pF
Reverse Transfer Capacitance
CRSS
140
pF



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