UTT12P10L-TN3-R datasheet(3/6 Pages) UTC

No. de pieza	UTT12P10L-TN3-R

Descripción Electrónicos	100V, 12A P-CHANNEL POWER MOSFET

PDF	6 Pages

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Fabricante Electrónico	UTC [Unisonic Technologies]

Página de inicio	http://www.utc-ic.com

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UTT12P10

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 6

www.unisonic.com.tw

VER.a

ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

SWITCHING PARAMETERS

Total Gate Charge

VDS=-80V, VGS=-10V, ID=-19A,

See Fig 3 (Note 2)

Gate to Source Charge

QGS

4.6

Gate to Drain ("Miller") Charge

QGD

11.5

Turn-ON Delay Time

tD(ON)

VDD=-50V, ID=-19A, RG=9.1Ω,

RD = 2.4Ω, See Fig. 1(Note 2)

Rise Time

Turn-OFF Delay Time

tD(OFF)

Fall-Time

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

-19

Maximum Body-Diode Pulsed Current

ISM

(Note 1)

-72

Drain-Source Diode Forward Voltage

VSD

TJ=25°C, IS=-19A,VGS=0V(Note 2)

-5.0

Body Diode Reverse Recovery Time

tRR

TJ=25°C, IF=-19A,

di/dt=100A/µs (Note 2)

130 260

Body Diode Reverse Recovery Charge

QRR

0.35 0.70

µC

Notes: 1. Repetitive rating; pulse width limited by max. junction temperature.

2. Pulse width≤300µs; duty cycle≤2%.

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