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SE2522L-R Datasheet(PDF) 3 Page - SiGe Semiconductor, Inc.

No. de pieza SE2522L-R
Descripción Electrónicos  RangeCharger??2.4 GHz Power Amplifier And Power Detector IC Preliminary Information
PDF  8 Pages
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Fabricante Electrónico  SIGE [SiGe Semiconductor, Inc.]
Página de inicio  http://www.sige.com
Logo SIGE - SiGe Semiconductor, Inc.

SE2522L-R Datasheet(HTML) 3 Page - SiGe Semiconductor, Inc.

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SE2522L
RangeCharger™ 2.4 GHz Power Amplifier And Power Detector IC
Preliminary Information
Absolute Maximum Ratings
These are stress ratings only. Exposure to stresses beyond these maximum ratings may cause permanent damage
to, or affect the reliability of the device. Avoid operating the device outside the recommended operating conditions
defined below. This device is ESD sensitive with an ESD rating of < 600V. Handling and assembly of this device
should be at ESD protected workstations.
Symbol
Parameter
Min.
Max.
Unit
VCC
Supply Voltage
-0.3
+3.6
V
VCTL
Control Voltage
-0.3
VCC
V
VEN
Ramping Voltage
-0.3
VCC
V
PIN
RF Input Power
+8
dBm
TSTG
Storage Temperature Range
-40
+150
°C
Tj
Maximum Junction Temperature
+150
°C
Recommended Operating Conditions
Symbol
Parameter
Min.
Typ.
Max.
Unit
TA
Operating Temperature
-40
+85
°C
VCC
Supply Voltage
2.7
3.3
3.6
V
DC Electrical Characteristics
Conditions: V
CC0=VCC1=VCC2=VEN=3.3V, VCTL=1.6V, TA =25°C, f =2.45GHz, using IEEE802.11b modulation, Input and
Output externally matched to 5
0Ω, unless otherwise noted.
Symbol
Parameter
Min.
Typ.
Max.
Unit
ICC
Supply Current, VCTL = 1.6V, PIN = -7dBm
-
110
130
mA
ICC(sat)
Supply Current (sat) @ PIN = +2dBm
-
140
175
mA
VCTL
PA Output Power Control Voltage Range
0.1
1.6
V
ICTL
Current sunk by VCTL Pin
55
100
µA
Logic High Voltage
2.0
V
VEN
Logic Low Voltage
0.8
V
ISTBY
Leakage Current when VEN = 0V, VCTL = 0V
0.1
200
µA
18-DST-01 Rev 2.4 Aug 7/02
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