BLF2425M7LS140 datasheet(4/11 Pages) NXP

No. de pieza	BLF2425M7LS140

Descripción Electrónicos	Power LDMOS transistor

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Fabricante Electrónico	NXP [NXP Semiconductors]

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BLF2425M7L140; BLF2425M7LS140

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Product data sheet

Rev. 3 — 6 September 2012

4 of 11

NXP Semiconductors

BLF2425M7L(S)140

Power LDMOS transistor

7.2 Impedance information

7.3 Circuit information

Table 8.

Typical impedance

Measured load-pull data. Typical values unless otherwise specified. IDq =1300mA; VDS =28V.

ZS and ZL defined in Figure 1.

(MHz)

(

)

(

)

2400

3.7

 5.4j

1.3

 1.5j

2450

6.9

 5.0j

1.5

 1.6j

2500

8.7

 2.0j

1.5

 1.6j

Fig 1.

Definition of transistor impedance

001aaf059

drain

gate

Printed-Circuit Board (PCB): Rogers 4350B;



r = 3.5; thickness = 0.508 mm;

thickness copper plating = 35

m.

See Table 9 for a list of components.

Fig 2.

Component layout for application circuit

DDD

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