BAT54W_SER

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© NXP B.V. 2012. All rights reserved.

Product data sheet

Rev. 3 — 20 November 2012

3 of 11

NXP Semiconductors

BAT54W series

Schottky barrier diodes

5.

Limiting values

[1]

[2]

Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

6.

Thermal characteristics

[1]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Per diode

reverse voltage

-

30

V

forward current

-

200

mA

repetitive peak forward

current

300

mA

non-repetitive peak

forward current

square wave;

[1] -600

mA

Per device; one diode loaded

total power dissipation

[2] -200

mW

junction temperature

-

150

C

ambient temperature

55

+150

C

storage temperature

65

+150

C

Table 6.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per device; one diode loaded

thermal resistance from

junction to ambient

in free air

[1] -

-

625

K/W