BAT54SW datasheet(1/11 Pages) NXP

No. de pieza	BAT54SW

Descripción Electrónicos	Planar Schottky barrier diodes with an integrated guard ring for stress protection, encapsulated in a very small SOT323

PDF	11 Pages

Scroll/Zoom	100%

Fabricante Electrónico	NXP [NXP Semiconductors]

Página de inicio	http://www.nxp.com

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1.

Product profile

1.1 General description

Planar Schottky barrier diodes with an integrated guard ring for stress protection,

encapsulated in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic

package.

1.2 Features and benefits

 Low forward voltage

 Low capacitance

 AEC-Q101 qualified

1.3 Applications

1.4 Quick reference data

[1]

Pulse test: tp  300 s;  0.02.

2.

Pinning information

BAT54W series

Schottky barrier diodes

Rev. 3 — 20 November 2012

Product data sheet

 Ultra high-speed switching

 Voltage clamping

 Line termination

 Reverse polarity protection

Table 1.

Quick reference data

Tamb =25 C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per diode

VR

reverse voltage

-

30

V

VF

forward voltage

IF =100 mA

[1] --

800

mV

IR

reverse current

VR =25V

[1] --

2

A

Table 2.

Pinning

Description

Simplified outline

Graphic symbol

BAT54W

1

anode

2

not connected

3

cathode

12

3

006aaa436

1

3

2

n.c.

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