2SC5337 datasheet(4/7 Pages) RENESAS

No. de pieza	2SC5337

Descripción Electrónicos	NPN Silicon RF Transistor for High-Frequency

PDF	7 Pages

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Fabricante Electrónico	RENESAS [Renesas Technology Corp]

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2SC5337

R09DS0047EJ0300 Rev.3.00

Page 4 of 5

Sep 14, 2012

VCE = 10 V

IC = 50 mA

Frequency f (GHz)

INSERTION POWER GAIN, MAG

vs. FREQUENCY

0.2

0.4

0.6 0.8 1.0 1.4

2.0

MAG

|S21e|

100

Collector Current IC (mA)

NOISE FIGURE vs.

COLLECTOR CURRENT

VCE = 10 V

f = 1 GHz

100

300

Collector Current IC (mA)

IM3, IM2+, IM2– vs.

COLLECTOR CURRENT

IM2–

IM2+

IM3

VCE = 10 V

IM3 : Vin = 110 dB V/75

Ω 2 tone each

f = 2 × 190 – 200 MHz

IM2+ : Vin = 105 dB V/75

Ω 2 tone each

f = 90 + 100 MHz

IM2– : Vin = 105 dB V/75

Ω 2 tone each

f = 190 – 90 MHz

Remark The graphs indicate nominal characteristics.

S-PARAMETERS

S-parameters and noise parameters are provided on our web site in a form (S2P) that enables direct import of the

parameters to microwave circuit simulators without the need for keyboard inputs.

Click here to download S-parameters.

[Products]

→ [RF Devices] → [Device Parameters]

URL http://www.renesas.com/products/microwave/

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