2SC5337 datasheet(2/7 Pages) RENESAS

No. de pieza	2SC5337

Descripción Electrónicos	NPN Silicon RF Transistor for High-Frequency

PDF	7 Pages

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Fabricante Electrónico	RENESAS [Renesas Technology Corp]

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2SC5337

R09DS0047EJ0300 Rev.3.00

Page 2 of 5

Sep 14, 2012

ELECTRICAL CHARACTERISTICS (TA = +25

°C)

Parameter

Symbol

Test Conditions

MIN.

TYP.

MAX.

Unit

DC Characteristics

Collector Cut-off Current

ICBO

VCB = 20 V, IE = 0

–

0.01

5.0

μA

Emitter Cut-off Current

IEBO

VBE = 2 V, IC = 0

–

0.03

5.0

μA

DC Current Gain

hFE

Note 1

VCE = 10 V, IC = 50 mA

120

200

–

RF Characteristics

Insertion Power Gain

⏐S21e⏐2 VCE = 10 V, IC = 50 mA, f = 1 GHz

7.0

8.3

–

Noise Figure (1)

Note 2

VCE = 10 V, IC = 50 mA, f = 500 MHz

–

1.5

3.5

Noise Figure (2)

Note 2

VCE = 10 V, IC = 50 mA, f = 1 GHz

–

2.0

3.5

2nd Order Intermoduration Distortion

IM2

VCE = 10 V, IC = 50 mA, RS = RL = 75

Ω,

Vin = 105 dB

μV/75 Ω, f1 = 190 MHz,

f2 = 90 MHz, f = f1

− f2

–

59.0

–

3rd Order Intermoduration Distortion

IM3

VCE = 10 V, IC = 50 mA, RS = RL = 75

Ω,

Vin = 105 dB

μV/75 Ω, f1 = 190 MHz,

f2 = 200 MHz, f = 2

× f1 − f2

–

82.0

–

Notes 1. Pulse measurement: PW

≤ 350

μs, Duty Cycle ≤ 2%

2. RS = RL = 50

Ω, tuned

hFE CLASSIFICATION

Rank

QR/YQR

QS/YQS

Marking

hFE Value

60 to 120

100 to 200

<R>

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