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STP45N65M5 Datasheet(PDF) 3 Page - STMicroelectronics

No. de pieza STP45N65M5
Descripción Electrónicos  N-channel 650 V, 0.067 typ., 35 A MDmesh V Power MOSFET in D2PAK, TO-220FP and TO-220 packages
PDF  20 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP45N65M5 Datasheet(HTML) 3 Page - STMicroelectronics

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DocID022854 Rev 4
3/20
STB45N65M5, STF45N65M5, STP45N65M5
Electrical ratings
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
D2PAK
TO-220
TO-220FP
VGS
Gate-source voltage
± 25
V
ID
Drain current (continuous) at TC = 25 °C
35
35 (1)
1.
Limited by maximum junction temperature.
A
ID
Drain current (continuous) at TC = 100 °C
22
22 (1)
A
IDM
(1)
Drain current (pulsed)
140
140 (1)
A
PTOT
Total dissipation at TC = 25 °C
210
40
W
dv/dt (2)
2.
ISD ≤ 35 A, di/dt ≤ 400 A/µs, VDS(Peak) < V(BR)DSS, VDD = 400 V
Peak diode recovery voltage slope
15
V/ns
dv/dt (3)
3.
VDS ≤ 480 V
MOSFET dv/dt ruggedness
50
V/ns
VISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1 s; TC = 25 °C)
2500
V
Tstg
Storage temperature
- 55 to 150
°C
Tj
Max. operating junction temperature
150
°C
Table 3. Thermal data
Symbol
Parameter
Value
Unit
D2PAK
TO-220FP
TO-220
Rthj-case
Thermal resistance junction-case max
0.60
3.13
0.60
°C/W
Rthj-pcb
(1)
1.
When mounted on 1 inch² FR-4, 2 Oz copper board.
Thermal resistance junction-pcb max
30
°C/W
Rthj-amb
Thermal resistance junction-ambient max
62.5
°C/W
Table 4. Avalanche characteristics
Symbol
Parameter
Value
Unit
IAR
Avalanche current, repetetive or not repetetive
(pulse width limited by Tjmax )
9A
EAS
Single pulse avalanche energy (starting tj=25°C,
Id= IAR; Vdd=50)
810
mJ



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